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 CGY 196
GaAs MMIC Preliminary Data
l l l l l l l l l
Broadband Power Amplifier [ 800..3500 Mhz ] DECT,PHS,PCS,GSM,AMPS,WLAN,WLL Single Voltage Supply Operating voltage range: 2.0to 6 V Pout = 25.5dBm at Vd=2.4V Pout = 27.0dBm at Vd=3.0V Pout = 30.0dBm at Vd=5.0V Overall power added efficiency up to 50 % Easy external matching
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (taped) Package
CGY 196
t.b.d.
t.b.d.
SCT598
Maximum ratings Characteristics Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (Ts < 81 C) Symbol VD max. Value 6 1.0 20 150 -55...+150 1.0 Unit V A dBm C C W
ID Pinmax TCh Tstg Ptot PPulse
Ts: Temperature at soldering point
Pulse peak power Thermal Resistance Characteristics Channel-soldering point Symbol max. Value 70 Unit K/W 2.0 W
RthChS
Siemens Aktiengesellschaft Semiconductor Group
1 1
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Functional Block Diagram
VD1
VD2
RFin/Vg
RFout/Vd3
G ND
G ND
G ND
Pin # 1 2 3 4 5 6 7 8
Name
Configuration RF input power + Gate voltage [0V internal] RF and DC ground Pos. drain voltage of the 2nd stage not connected not connected RF and DC ground Pos. drain voltage of the 1st stage
RFin/Vg GND VD2 n.c. n.c. GND VD1
RFout/VD3 RF output power / Pos. drain voltage of the 3rd stage
DC characteristics Characteristics Drain current stage 1 stage 2 stage 3 Transconductance stage 1 stage 2 stage 3 Symbol Conditions VD1=3V VD2=3V VD2=3V VD=3V, ID=50mA VD=3V, ID=300mA VD=3V, ID=300mA min typ 45 65 340 110 650 650 max Unit mA mA mA mS mS mS
IDSS1 IDSS2 IDSS2 gfs1 gfs2 gfs3
Siemens Aktiengesellschaft Semiconductor Group
2 2
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Determination of Permissible Total Power Dissipation for Continuous and Pulse Operation The dissipated power is the power which remains in the chip and heats the device. It does not contain RF signals which are coupled out consistently. a) Continuous Wave / DC Operation For the determination of the permissible total power dissipation Ptot-DC from the diagram below it is necessary to obtain the temperature of the soldering point TS first. There are two cases: * When RthSA (soldering point to ambient) is not known: Measure TS with a temperature sensor at the leads were the heat is transferred from the device to the board ( normally at the widest source or ground lead for GaAs ). Use a small sensor of low heat transport, for example a thermoelement ( < 1mm ) with thin wires or a temperature indicating paper while the device is operating. When RthSA is already known: TS = Pdiss x RthSA + TA
*
mW
1600
Permissible Total Power Dissipation in DC Operation
1400 1200
Ptot DC = f (Ts)
1000 75 800 600
400
200
0 0 25 50 75 100 125 150
Temperature of soldering point, Ts
C
Siemens Aktiengesellschaft Semiconductor Group
3 3
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
b) Pulsed Operation For the calculation of the permissible pulse load Ptot-max the following formula is applicable: Ptot-max = Ptot-DC x Pulse factor = Ptot-DC x ( Ptot-max / Ptot-DC )
Use the values for Ptot-DC as derived from the above diagram and for the pulse factor = Ptot-max / Ptot-DC from the following diagram to get a specific value. Pulse factor:
Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = " Pulse peak power " = 2 W
Siemens Aktiengesellschaft Semiconductor Group
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16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
c) Reliability Considerations This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The following formula allows to track the individual contributions which determine the channel temperature. Tch =
(=
( Pdiss
x
RthChS )
+
TS
Temperature of soldering point, measured or calculated
Channel temperature junction temperature)
Power dissipated in the chip. It does not contain decoupled RFpower
Rth of device from channel to soldering point
Siemens Aktiengesellschaft Semiconductor Group
5 5
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Electrical characteristics [ 3.0V DECT-Application: PCB-Layout see page 9] (TA = 25C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Symbol min typ max Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Gain VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Overall Power added Efficiency VD=3.0V; Pin = 3 dBm Supply current VD=4.8V; Pin = -10 dBm Supply current VD=4.8V; Pin = 0 dBm Gain VD=4.8V; Pin = -10 dBm Output Power VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 0 dBm Overall Power added Efficiency VD=4.8V; Pin = 5 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase,
Unit mA mA dB dBm
IDD IDD G Po PAE PAE IDD IDD G Po PAE PAE -S21 -
-
300 450 32 26.0 45 50
-
-
% % mA mA dB dBm
-
450 370 32 29 45 50 40 No module damage for 10 sec. No module damage for 10 sec.
-
% % dB -
-
-
-
-
All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level
-
-
Siemens Aktiengesellschaft Semiconductor Group
6 6
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Output power and power added efficiency pulsed mode: T=417s, duty cycle 12.5% Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9]
CGY196
Vd=3.3V, duty cycle 10%
27,0 26,0 25,0 24,0 23,0 22,0 21,0 20,0 19,0 18,0 17,0 -11 -10 60,0 55,0 50,0 45,0 40,0 35,0 30,0 25,0 20,0 15,0 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm
Pout [dBm] PAE [%]
CGY196
VD=5.0V, duty cycle 10%
30,0 29,0 28,0 27,0 26,0 25,0 24,0 23,0 22,0 21,0 20,0 -11 -10 Pout [dBm] PAE [%] 60,0 55,0 50,0 45,0 40,0 35,0 30,0 25,0 20,0 15,0 10,0 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 10 Pin/dBm
Siemens Aktiengesellschaft Semiconductor Group
7 7
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9] S-Parameter [pulsed mode: T=417s, duty cycle 12.5%, Pin=0dBm,Vd=3.3V]
+ * o o o x
o o o
oooo oo o o
o
o ** ++*** ** ++++++ ** ** *+ +++ o + +* + * +* + ** xx xxxxxx x x
o x x x x
x x
x
Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417s, duty cycle 12.5%]
CGY196
400 350 300 250 200 150 100 50 0 0,0 1,0 2,0 Vd / V 3,0 4,0 5,0 40 30 20 10 0 -10 -20 -30 -40
I(mA) Pout(dBm)
Siemens Aktiengesellschaft Semiconductor Group
8 8
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Electrical characteristics [3.0V DECT-Application: PCB-Layout see page 9]
Harmonic Distortion CGY196 Vd=3.3V
-30,0
-35,0
-40,0
Distortion / dBc
-45,0 2f 3f
-50,0
-55,0
-60,0
-65,0
-70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm
Harmonic Distortion CGY196 Vd=4.8V
-30,0
-35,0
-40,0
Distortion / dBc
-45,0 2f 3f
-50,0
-55,0
-60,0
-65,0
-70,0 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Pin / dBm
Siemens Aktiengesellschaft Semiconductor Group
9 9
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Test Board Layout [3.0V DECT-Application f=1.89GHz ]
Siemens Aktiengesellschaft Semiconductor Group
10 10
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Electrical characteristics [2.4V DECT-Application: PCB-Layout see page 12] (TA = 25C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified) Characteristics Symbol min typ max Supply current VD=2.4V; Pin = +0 dBm Supply current VD=2.4V; Pin = -10 dBm Output Power VD=2.4V; Pin = 0 dBm Overall Power added Efficiency VD=2.4V; Pin = +0 dBm Supply current VD=2.2V; Pin = +0 dBm Supply current VD=2.2V; Pin = -10 dBm Output Power VD=2.2V; Pin = 0 dBm Overall Power added Efficiency VD=2.2V; Pin = +0 dBm Supply current VD=3.0V; Pin = +0 dBm Supply current VD=3.0V; Pin = -10 dBm Output Power VD=3.0V; Pin = 0 dBm Overall Power added Efficiency VD=3.0V; Pin = +0 dBm Off Isolation VD=0V; Pin = 0 dBm Load mismatch Pin=0dBm , VD3.6V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Load mismatch Pin=3dBm , VD5.0V , ZS=50 Ohm, Load VSWR = 20:1 for all phase, Stability Pin=0dBm, VD=3.6V, ZS=50 Ohm, Load VSWR = 3:1 for all phase Stability Pin=3dBm , VD=5.0V , ZS=50 Ohm, Load VSWR = 3:1 for all phase,
Unit mA mA dBm
IDD IDD Po PAE IDD IDD Po PAE IDD IDD Po PAE -S21 -
-
360 450 25.7 44
-
-
% mA mA dBm
-
350 450 25.1 42
-
% mA mA dBm
-
370 450 27.0 44 34 No module damage for 10 sec. No module damage for 10 sec.
-
% dB -
-
-
-
-
All spurious output more than 70 dB below desired signal level All spurious output more than 70 dB below desired signal level
-
-
Siemens Aktiengesellschaft Semiconductor Group
11 11
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Pout,Id = f (Vd) | Pin=0dBm [pulsed mode: T=417s, duty cycle 12.5%]
CGY196 2.4V Applikation
450 400 350 300 250 200 150 100 50 0 0,0 1,0 2,0 Vd / V 3,0 40 30 20 10 0 -10 -20 -30 -40 -50 5,0
I(mA) Pout(dBm)
4,0
Siemens Aktiengesellschaft Semiconductor Group
12 12
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Test Board Layout [2.4V DECT-Application f=1.89GHz ]
Siemens Aktiengesellschaft Semiconductor Group
13 13
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
SIEMENS
Type Package
High Frequency Semiconductors
File Date
CGY196 GaAs MMIC
Key-word
SCT598
D:\Projekte\AKTUELL\EH_DB\lie ferung_pdf\Lieferung\word\cgy19
26.02.1998
Notes on Processing
Preliminary soldering recommendation * * Foot Print drawing C63060-A2123-A001-01-0027
Soldering soldering profile: ramp-up preheating ramp-up peak exposure to molten solder typ. solder temperature peak temperature ramp-down
wave soldering: reflow soldering: (IR or VPR)
unsuitable suitable
temperature gradient: time at 100 - 150 C: temperature gradient above 183C typ. 215-245C max. peak 260C temperature gradient:
max. + 2 K/sec min. 90 sec. max. + 6 K/sec max. 150 sec max. 30 sec. max. 10 sec. min. - 6C/sec
(see also soldering standard profile of databook `package information') comments * * slow ramp-up, long preheating phase and low max. temperature recommended 150 - 200 m - visual inspection - cross sectioning - measurement of case temperature / thermal resistance case to ambient level 1 level 111 storage floor life at 30C/90% unlimited storage floor life at 30C/60% unlimited IR/Convection; max. 245C; < 6K/sec.
Solder paste thickness Control of soldering (voids)
* *
Jedec A-112A IPC-9501 (IPC-4202)
Siemens Aktiengesellschaft Semiconductor Group
14 14
16.6.1998 1998-11-01 HL HF PE GaAs
CGY 196
Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstrae 73, D-81541 Munchen. copyright Siemens AG 1996. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and cirucits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery, and prices please contact the Offices of Semiconductor Group in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer.
Siemens Aktiengesellschaft Semiconductor Group
15 15
16.6.1998 1998-11-01 HL HF PE GaAs


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